High Frequency, Frequency Multiplier Using Parallel Gunn Diodes.
Abstract
An object of this invention is to increase the frequency of a Gunn effect oscillator by at least an integer factor. In its broadest form, the invention is a Gunn-effect frequency multiplier having a plurality of semiconducting elements capable of supporting Gunn-effect domains; a cathode and an anode, common to all said semiconducting elements, connecting said elements in parallel; and means for sequentially creating a dipole domain in each of said semiconducting elements during a time substantially less than or equal to the shortest transit time of a dipole domain between said anode for any of said semiconducting elements. Patent application. (jes)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 30, 1990
- Accession Number
- ADD014523
Entities
People
- Mario G. Ancona
Organizations
- United States Department of the Navy