Long Wavelength Infrared Detector with Heterojunction.
Abstract
An infrared radiation detector having a first semiconductor layer deposited on a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact. Patent applications. (SDW)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 18, 1990
- Accession Number
- ADD014608
Entities
People
- Tak-kin Chu
Organizations
- United States Department of the Navy