Graded Bandgap Semiconductor Device for Real-Time Imaging.
Abstract
Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semiconductor body is a graded bandgap establishing composition of two selected compounds alloyed to a variable, position-dependent degree between the respective radiation and emission locations at which the respective narrow and wide bandgap properties of the compounds prevail. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1991
- Accession Number
- ADD015000
Entities
People
- V. K. Mathur
Organizations
- United States Department of the Navy