Method of Forming Nanometer-Scale Trenches and Vias.
Abstract
Nanometer thick metallic layers are fabricated on trenches or holes (especially vias) within a substrate by depositing, by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, a metallic layer on a substrate surface on which one or more trenches or holes are formed. The metallic layer thus formed has an extremely small grain size, which permits the attainment of very high spatial resolution and thus permits the formation of extremely small trenches and holes, increasing the attainable memory/circuit density. This invention is useful in the fabrication of ultra-high density trench capacitors and ULSI microelectronic circuits. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 24, 1991
- Accession Number
- ADD015180
Entities
People
- David S. Hsu
- Henry F. Gray
Organizations
- United States Department of the Navy