Lithographic Mask and Method for Fabrication Thereof.
Abstract
This invention pertains to improving resolution in making electronic masks. More specifically, this invention pertains to reduction of minimum feature sizes and proximity effects by reducing backscattering of electrons in high voltage electron beam lithography used in making electronic masks. Recently, there has been an interest in the development of x-ray technology as an exposure source in the production of electronic devices, such as integrated circuits. Presently, x-ray lithography is believed to be the most promising path on the horizon for manufacturing integrated circuits of 0.25 micrometers and less. There are still many elements of the lithographic process to be developed in order to meet the goal of manufacturing ultra large scale integrated circuits with feature sizes in the range of 0.10 micrometers.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1992
- Accession Number
- ADD015414
Entities
People
- C. R. Marrian
- E. A. Dobisz
- K. W. Rhee
- M. C. Peckerar
Organizations
- United States Department of the Navy