Substrate Temperature Control Apparatus and Technique for CVD Reactors.
Abstract
One of the critical experimental parameters affecting the quality and growth rate of chemical vapor deposition species, such as, diamond is the substrate temperature. An apparatus and technique for the precise control of the substrate temperature in a chemical vapor deposition environment has been developed. In a preferred embodiment, the technique uses a variable gas mixture in conjunction with the disclosed apparatus of the present invention to precisely control the temperature of the substrate to within at least +/- 20 deg C for extended periods of time and over large area substrates on the order of 1 in diameter or larger
Document Details
- Document Type
- Technical Report
- Publication Date
- May 18, 1993
- Accession Number
- ADD015818
Entities
People
- Thomas A. Snail
- Thomas P. Thorpe
Organizations
- United States Department of the Navy