Method of Fabricating Sub-Half-Micron Trenches and Holes.
Abstract
A non-optical method for the formation of sub-half micron holes, vias, or trenches within a substrate. For example, a substrate having at least two buttresses or a trench having a interbuttress distance or a width of 1.0 to 0.5 microns, respectively, is conformally or non-conformally lined with a layer material. Thereafter, the layer material from horizontal surfaces is removed to expose the substrate underneath while leaving the layer material attached to the essentially vertical walls of the buttresses or the trenches essentially intact, thereby, narrowing the interbuttress distance or the trench width, respectively, to sub-half micron dimensions. The exposed substrate surface is then subjected to anisotropic etching to form sub-half micron trenches, holes and vias in the substrate. Finally, the buttress and layer material are removed from the substrate.(Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 20, 1993
- Accession Number
- ADD016064
Entities
People
- David S. Hsu
Organizations
- United States Department of the Navy