Interband Lateral Resonant Tunneling Transistor.

Abstract

This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices. jg

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Document Details

Document Type
Technical Report
Publication Date
Nov 14, 1994
Accession Number
ADD017399

Entities

People

  • C. A. Hoffman
  • F. J. Bartoli
  • J. R. Meyer

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Circuits
  • Conduction Bands
  • Electron Beam Lithography
  • Electronic Circuits
  • Energy Bands
  • Energy Gaps
  • Field Effect Transistors
  • Geometry
  • Heterojunctions
  • Integrated Circuits
  • Large Scale Integrated Circuits
  • Materials
  • Quantum Wells
  • Quantum Wires
  • Semiconductors
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing