Lower Bandgap, Lower Resistivity, Silicon Carbide Heteroepitaxial Material, and Method by Making Same.
Abstract
A silicon carbide semiconductor material, and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 12OO C or less, and produces a heterolayer having a reduced bandgap, and hence reduced contact resistance, but which is fabricatable with the less expensive equipment commonly used to fabricate silicon based semiconductors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 17, 1995
- Accession Number
- ADD017622
Entities
People
- Galina Kelner
- K. Irvine
- Michael G. Spencer
- Vladamir A. Dmitriev
Organizations
- United States Department of the Navy