Reactive Oxygen-Assisted Ion Implantation into Metals and Products Made Therefrom.
Abstract
A method of ion implantation using oxygen backfill and a modified surface layer formed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 A.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 13, 1994
- Accession Number
- ADD017651
Entities
People
- Bruce D. Sartwell
- Paul Natishan
Organizations
- United States Department of the Navy