Method for Monitoring Surface Stress.
Abstract
A piece of single crystal silicon is embedded in a material such that the silicon is flush with the surface thereof. The silicon is illuminated with infrared radiation having a wavelength in the range of 800-1100 nanometers. Isochromatic fringe patterns projected from the silicon are monitored as a direct indication of the amount of stress experienced at the surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 27, 1996
- Accession Number
- ADD018208
Entities
People
- Richard H. Nadolink
Organizations
- United States Department of the Navy