Process for Forming Epitaxial BaF2 on GaAs

Abstract

A process for growing single crystal epitaxial BaF2 layers on gallium arsenide substrates by slowly reacting Ba, BaCl2, BaI2, BaBr2, BaF2.BaCl2, BaF2.BaBr2, BaF2.BaI2, BaC12.BaBr2 , Ba3(GaF6)2, BaH2, or BaO2 vapor with a clean, hot GaAs substrate at 500 to 700 deg C in high vacuum until a uniform, thin (tilde 12A) layer of reaction product is formed and then vapor depositing BaF2 onto the reaction layer at room temperature to 400 deg C to form the single crystal, epitaxial BaF2 layer.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1995
Accession Number
ADD018630

Entities

People

  • Francisco Santiago
  • Michael Stumborg
  • Tak-kin Chu

Organizations

  • United States Department of the Navy

Tags

DTIC Thesaurus Topics

  • Barium Compounds
  • Compound Semiconductors
  • Crystals
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Films
  • Gallium
  • Gallium Arsenides
  • Integrated Circuits
  • Materials
  • Patent Applications
  • Semiconductor Devices
  • Semiconductors
  • Single Crystals
  • Substrates
  • Vacuum

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene