Field Emitter Cell and Array with Vertical Thin-Film-Edge Emitter.

Abstract

A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

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Document Details

Document Type
Technical Report
Publication Date
Mar 23, 1998
Accession Number
ADD018888

Entities

People

  • David S. Hsu
  • Henry F. Gray

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coatings
  • Composite Materials
  • Etching
  • Extraction
  • Fabrication
  • Films
  • Manufacturing
  • Materials
  • Materials Processing
  • Metals
  • Oxidation
  • Oxide Films
  • Patent Applications
  • Perforation
  • Reactive Ion Etching
  • Thin Films
  • Work Functions

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene