Thin-Film Edge Field Emitter Device

Abstract

A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second port ion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second port ion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 20, 1998
Accession Number
ADD018901

Entities

People

  • David S. Hsu
  • Henry F. Gray

Organizations

  • United States Department of the Navy

Tags

DTIC Thesaurus Topics

  • Alloys
  • Chemical Vapor Deposition
  • Coatings
  • Diamond Films
  • Dielectrics
  • Fabrication
  • Films
  • Manufacturing
  • Materials
  • Materials Processing
  • Parallel Computing
  • Parallel Processing
  • Patent Applications
  • Semiconductors
  • Substrates
  • Thin Films
  • Work Functions

Readers

  • Fluid Dynamics.
  • Microwave Engineering.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene