Electronic Devices Grown on Off-Axis Sapphire Substrate

Abstract

An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off alpha-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1 - 10 micron thick semiconducting film disposed on the nucleating layer.

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Document Details

Document Type
Technical Report
Publication Date
Jul 15, 1999
Accession Number
ADD019445

Entities

People

  • A. E. Wickenden
  • Daniel Koleske
  • M. E. Twigg
  • Mohammad Fatemi
  • Richard Henry

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Aluminum Nitrides
  • Compound Semiconductors
  • Crystals
  • Elements
  • Epitaxial Growth
  • Films
  • Gallium
  • Gallium Nitrides
  • Inventions
  • Materials
  • Measurement
  • Nitrides
  • Patent Applications
  • Patents
  • Semiconducting Films
  • Thermal Conductivity
  • X Rays

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene