Anti-Charging Layers for Beam Lithograpghy and Mask Fabrication

Abstract

This invention discloses an anti-charging layer for beam lithography and mask fabrication. This invention reduces beam displacement and increases pattern placement accuracy. The process will be used in the beam fabrication of high-resolution lithographic masks as well as beam direct write lithography of electronic devices. The anti-charging layer is formed by the use of metal films bound to metal ligating self-assembled monolayers (SAMs) as discharge layers.

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Document Details

Document Type
Technical Report
Publication Date
May 25, 2001
Accession Number
ADD019839

Entities

People

  • Elizabeth Dobisz

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Electric Fields
  • Electron Beam Lithography
  • Electron Beams
  • Fabrication
  • Films
  • Inventions
  • Lithography
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Metal Films
  • Monomolecular Films
  • Polymeric Films
  • Self Assembled Monolayers

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Nanofabrication and Microfabrication.
  • Organic Chemistry

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene