Modified InAs Hall Elements

Abstract

This invention pertains to more sensitive and more stable electronic devices which can sense electrical and magnetic fields. The devices are characterized by InAs channels confined on both sides thereof by a wide band gap AlSb material; protective layers above the AlSb material; modulation doping above the AlSb material; and layers of the InAs channel material containing 1 to 99 mol percent antimony, with the channel material being deposited in the form of alternating monolayers of InSb and InAs, of a ternary mixture of InAsSb.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 13, 2000
Accession Number
ADD019893

Entities

People

  • Brian R. Benett
  • John B. Boos

Organizations

  • United States Department of the Navy

Tags

Communities of Interest

  • Sensors

DTIC Thesaurus Topics

  • Advanced Materials
  • Band Gaps
  • Band Structures
  • Charge Density
  • Detectors
  • Electron Mobility
  • Energy Bands
  • Heterojunctions
  • High Electron Mobility Transistors
  • Magnetic Fields
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Patent Applications
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Polymer Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene