The Influence of Crystal Growth Rate and Electrodiffusion (Sweeping) on Point Defects in alpha-Quartz,

Abstract

As-grown quartz exhibits OH-related infrared absorption bands at 3585, 3437, and 1/3400 cm when examined at 77 K. We have investigated the strengths of these bands in a series of quartz crystals grown at different rates in the Air Force Hydrothermal Facility at Hanscom AFB. Growth rates were varied from 0.3 to 1.4 mm/day. All three infrared bands listed above were small for crystal growth rates below 0.8 mm/day. However, their strengths increase nearly linearly with growth rates above this value. The industry standard for determining the 'Q value' of quartz is to measure the room temperature infrared absorption at or near 1/3500 cm. Our results indicate that slow growth results in a reduction of the OH bands in this region and should correspond to higher Q material.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1982
Accession Number
ADP001506

Entities

People

  • A. F. Armington
  • J. J. Martin
  • L E Halliburton
  • R. B. Bossoli

Organizations

  • Oklahoma State University–Stillwater

Tags

DTIC Thesaurus Topics

  • Absorption
  • Air Force
  • Critical Temperature
  • Crystal Growth
  • Crystals
  • Frequency
  • Glass Transition Temperature
  • Materials
  • Point Defects
  • Standards
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics