Atomic Redistribution in Ion Mixing of Bilayer Thin Films,
Abstract
An apparatus used for in-situ ion mixing and Rutherford Backscattering (RBS) analysis is described, and data are presented for thin film (i.e. 'limited supply') structures of the Ag-Si and Au-Si simple eutectic systems. We find considerable preferred orientation in the Ag thin films which was not observed in the Au films although they were similarly prepared. This texturing is initially increased by Xe ion bombardment and then decreases (less preferred orientation), but even with approximately 10 to the 16th power Xe 2/cm it is still far from random. Caution is required in both RBS analysis and during the heavy ion bomdardment to avoid misinterpretation due to this orientation problem. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADP001653
Entities
People
- Harald H. Jorch
- R. D. Werner