Ion-Beam Induced Changes in Alloy Composition,
Abstract
In general, point defect fluxes transport alloying components in proportions which differ from the bulk alloy concentration. Hence, even in initially homogeneous alloys, the local concentration will be altered in any region which experiences a net influx or outflow of defects. Because large numbers of point defects are introduced by each implanted ion, preferential transport of certain alloying components by persistent defect fluxes generated during ion bombardment can be highly efficient in modifying near-surface alloy compositions. This nonequilibrium, radiation-induced segregation (RIS) adds a further degree of complexity to the ion-implantation process. In a more positive vein, however, the established existence of strong RIS effects should allow certain materials modifications to be achieved more efficiently, and make possible additional types of modifications which otherwise would not be feasible. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADP001659
Entities
People
- H. Wiedersich
- Lynn E. Rehn
Organizations
- Argonne National Laboratory