Usage of the SYSCAP II Circuit Analysis Program to Determine Semiconductor Failure Threshold Levels caused by Lightning/EMP Transients,
Abstract
This paper describes an improved technique for calculating semiconductor junction heating resulting from arbitrary time-varying source terms. A FORTRAN subroutine is developed which permits solution of the convolution integral in the SYSCAP circuit analysis program which will simulate the thermal transient for each semiconductor of interest in a circuit subject to lightning/EMP disturbances. An example circuit is used to demonstrate the techniques; the results compare favorably with laboratory test data. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADP002214
Entities
People
- C. T. Kleiner
- D. L. Rusher