An Analysis of Thickness-Extensional Trapped Energy Resonators with Rectangular Electrodes in the Zinc-Oxide Thin Film on Silicon Configuration,
Abstract
It has recently been shown that highly uniform thin layers can be etched in a small well-defined region of a silicon wafer and that good quality thin piezoelectric films such as zinc-oxide can be deposited along with the electrodes to form high frequency trapped energy resonant device structures. The accompanying analytical work has been for pure thickness vibrations only. In this work an analysis of essentially thickness-extensional trapped energy modes in the thin piezoelectric film on silicon composite structure is performed. It is shown that for small wavenumbers along the plate the dispersion equation is isotropic in the plane of the plate even though the silicon is severely anisotropic in that plane. From the resulting dispersion relation an asymptotic differential equation describing the mode shape along the surface of the composite plate vibrating in the vicinity of a thickness-extensional resonance is obtained along with the associated edge conditions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADP002496
Entities
People
- D. S. Stevens
- Harry F. Tiersten
Organizations
- Rensselaer Polytechnic Institute