An X-Band GaAs FET Oscillator Using a Dielectric Resonator,

Abstract

An X-band GaAs FET oscillator highly stabilized by a dielectric resonator was developed. The oscillator's frequency stability is less than + or - 1MHz (-40 deg C 85 deg C), and its size has been greatly miniaturized (20.3mm x 12.6mm x 8.8mm). For the dielectric resonator, a new material Ba(NiTa)03-Ba(ZrZnTa)03 has been developed which has an extremely high Q value and high temperature stability. The characteristics of the resonator are K=29, Q=10,000 at 10 GHz and tau r=0 ppm/C.

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1983
Accession Number
ADP002518

Entities

People

  • Hitoshi Tamura
  • K. Wakino
  • S. Tamura
  • T. Nishikawa

Tags

DTIC Thesaurus Topics

  • Field Effect Transistors
  • Frequency
  • High Temperature
  • Materials
  • Oscillators
  • Pennsylvania
  • Resonators
  • X Band

Fields of Study

  • Physics

Readers

  • Analytical Mechanics
  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.