Characteristics of Ion Implanters for Fabrication of Electronic Devices,

Abstract

This paper concerns the characteristics of ion implanters for fabrication of electronic devices. High voltage implanters have been designed for implanting ions deeper into semiconductor materials. They are now standardized at 400 keV.

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1984
Accession Number
ADP003949

Entities

People

  • August Mark

Organizations

  • United States Army Communications-Electronics Command

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Fabrication
  • High Voltage
  • Implantation
  • Ion Implantation
  • Ions
  • Massachusetts
  • Materials
  • Semiconductors
  • Solid State Electronics
  • Voltage
  • Workshops

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics