Advances in Processing and Properties of Perovskite Thin-Films for FRAMs, DRAMs, and Decoupling Capacitors,
Abstract
Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt / Ti / Si3N4 / Si (100) substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were fabricated at temperatures as low as 550 deg C within 15 minutes by rapid thermal annealing. The films heat treated at 700 deg C for 5 minutes were single grain thick and exhibited P sub r, P sub sp, and E sub c in the ranges of 29-32 micron C/cm2, 44-53 micro C/cm2, and 50-60 kV/cm, respectively, and high speed switching times below 5 ns on 30x30 micron m2 electrodes. A switching time of 2.7 ns was observed on 19xl9 micron m2 area electrodes at a field of 200 kv/cm. Results of low and high field characterization on paraelectric PLT thin-films which were conventionally heat treated indicated that it has an excellent potential for use in ULSI DRAMs and as decoupling capacitors. These films showed a high charge storage density (15 micron C/cm2) and a low leakage current (0.5 micron A/cm2) at a field of 200 kv/cm. Also, the charging time for a capacitor area of 1 micron m2 at 200 kv/cm was estimated to be 0. 1 0 ns.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 05, 1991
- Accession Number
- ADP006640
Entities
People
- C. K. Barlingay
- C. T. Suchicital
- J. J. Lee
- S. K. Dey
- T. K. Gloerstad
Organizations
- Arizona State University