Pulsed Laser Deposition (PLD) of Oriented Bismuth Titanate Films for Integrated Electronic Applications,

Abstract

In this paper we describe recent successes of growth of epitaxial bismuth titanate (BTO) films by pulsed laser deposition (PLD) suitable for electro-optic and electrical switching device structures, and fabrication of an improved gate structure for a ferroelectric memory FET (FEMFET). TEM and x-ray results indicate that excellent crystalline quality BTO films were achieved on LaAlO3. Polarization switching was demonstrated for BTO capacitors with epitaxial superconducting YBaCu3Oy as the lower electrode. Using an SiO2 buffer layer, a BTO/Si structure was fabricated and direct charge modulation in the Si by polarization reversal in the BTO was demonstrated.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006643

Entities

People

  • H. Buhay
  • J. Talvacchio
  • M. H. Francombe
  • S. Sinharoy
  • W. H. Kasner

Tags

DTIC Thesaurus Topics

  • Bismuth
  • Bismuth Titanate
  • Capacitors
  • Colorado
  • Electrodes
  • Fabrication
  • Lasers
  • Modulation
  • Polarization
  • Pulsed Lasers
  • Switching
  • Titanates
  • X Rays

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene