Filament-Assisted Pulsed Laser Deposition of Epitaxial PbZr subx Ti sub1-x O sub3 Films: Morphological and Electrical Characterization,
Abstract
A modification of the conventional pulsed laser deposition technique was employed, whereby a low energy electron-emitting filament was placed between the target and the substrate (-20 V filament/substrate bias) in order to produce reactive species (02- and O-) during deposition. Using this modification, epitaxial thin films of PbZrxTil-xO3 (PZT, 0<x<0.6) were prepared in situ on virgin (100) MgO and (100) Pt/(100) MgO substrates at a substrate temperature of 550 deg C and in an oxygen ambient (0.3 Torr). The topography of films prepared without a filament on virgin MgO were porous and composed of grains of about 1000 A in diameter. As the emission current was increased from 0 to 400 micron A, the grain size decreased to less than 100 A with a concomitant decrease in the porosity. The nucleation of crystallites of other orientations was observed at emission currents greater than about 500 micron A. Trilayer structures (Pt/PZT/Pt/<1OO>Mgo) were fabricated for electrical measurements. Non-filament-assisted PZT cells usually failed because of a high probability of conductive paths through the PZT layer. Filament-assisted films were much less prone to this problem. Typical remanent polarizations and coercive fields were 15-20 micron C/cm2 and 30-50 kv/cm, respectively.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 05, 1991
- Accession Number
- ADP006644
Entities
People
- D. B. Chrisey
- J. S. Horwitz
- K. S. Grabowski
- R. E. Leuchtner
Organizations
- United States Naval Research Laboratory