Process Dependent Electrical Characteristics and Equivalent Circuit Model of SOL-GEL Based PZT Capacitors,
Abstract
Studies of electrical properties and an equivalent circuit model is developed for ferroelectric PZT(Ti = 60%) thin film capacitors made by sol-gel spin coating with Pt electrodes. The equivalent circuit consists of two major parts: serial space charge capacitors demonstrating surface effects and parallel elements modeling the inner polycrystalline ferroelectric regions. This model is based on device physics which can demonstrate both the measured capacitance voltage characteristics and hysteresis curves. From the model fit to the data, an estimate of the space charge concentration at the surface and inner grain boundary region of 5x10(20) cm(-3) and 1x10(18) cm(-3) respectively is made. Further electrical characterizations such as pulse switching and polarization degradation (fatigue) have also been studied. Using the equivalent circuit, other characteristics such as the switching time can be studied showing its dependence on applied voltage and capacitor area. The applied voltage dependence of fatigue is shown via an empirical equation where the degradation rate is electric field activated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 05, 1991
- Accession Number
- ADP006647
Entities
People
- C. A. Paz De Araujo
- Hiroyuki Yoshimori
- Hitoshi Watanabe
- Takashi Mihara
Organizations
- University of Colorado, at Colorado Springs