Device Effects of Various Zr/Ti Ratios of PZT Thin-Films Prepared by SOL-GEL Method,
Abstract
PZT, PbZr sub x Tl sub 1-x 03, thin-films with various Zr/Ti ratios, 1 00/0 (lead zirconate) to 0/100 (lead titanate), were prepared by the sol-gel method. Basic electric properties, dielectric constant, tan sigma, P-E hysteresis curve, switching properties were measured respectively as a function of composition. Dielectric constant indicated a specific peak value (approximately 1100) around the morphotropic phase boundary between tetragonal and rhombohedral phase. Satisfactory low-voltage saturated hysteresis curves were observed for the compositions of PZT(90/10) through PZT(20/80). The remanent polarization and the coercive field increased as the titanium content decreased. The result of X-ray measurement showed that the lattice constants of thin-Film PZT are different from bulk ceramics for compatible compositions. The boundary, on which the c/a ratio must be 1 (rhombohedral phase), was slightly shifted to PbTiO3 side. This distortion in crystal structure is considered to be due to the thin-film effect, which the lattice mismatch between the platinum substrate and the PZT layer, restricted the ions to position into proper cites.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 05, 1991
- Accession Number
- ADP006648
Entities
People
- C. A. Paz De Araujo
- Hideo Watanabe
- T. Mihara
Organizations
- University of Colorado, at Colorado Springs