C-V and I-V Simulations of Metal Ferroelectric Silicon Capped and Uncapped BaMgF sub4 Devices Using Pisces II-B,

Abstract

Simulation of BaMgF4 metal-ferroelectric-silicon field effect transistors (MFSFETs) are presented based on experimentally derived CV data shown recently in the literature. A standard 2-D semiconductor device simulator (PISCES II-B) is used. The modulation of the semiconductor surface is modelled by adding the net BaMgF4 (capped with ZrO2 or not), polarization charge to the interface charge. The model correctly describes the experimental CV behavior including the sense of the CV curve (indicating pure ferroelectric modulation). The effect of threshold voltage modulation by the ferroelectric is also examined. The device model clearly shows the adaptive transistor behavior of the I sub DS vs V sub g(P sub r) characteristics. These simulations are being used as tools for device design and process integration towards the development of nondestructively read ferroelectric memories.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006650

Entities

People

  • C. A. Paz De Araujo
  • Deng Yuan Chen
  • L. D. Mcmillan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Colorado
  • Field Effect Transistors
  • Modulation
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Simulators
  • Transistors
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics