Characterization and Modelling of Thin-Film Ferroelectric Capacitors Using C-V Analysis

Abstract

Advances have been made in the electronic characterization and analysis of thinfilm ferroelectric (FE) memory capacitors using capacitance vs. voltage (C-V) measurements. A mathematical model of the small-signal electrical behavior of the FE capacitor has been developed. This analysis shows that the small-signal characteristics of the FE capacitor are largely determined by the space charge concentrations at the ferroelectric to contact interface. These space charge regions have an adverse effect on the permittivity, coercivity and switching characteristics of the ferroelectric capacitor. These results will contribute to improving ferroelectric processing, appraising the quality of ferroelectric devices, and developing device models of the ferroelectric memory capacitors for use in circuit design.

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Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006667

Entities

People

  • Ciaran J. Brennan

Organizations

  • Charles Stark Draper Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Charge Density
  • Delta Functions
  • Dielectric Properties
  • Electric Fields
  • Equations
  • Experimental Data
  • Integrated Circuits
  • Measurement
  • Metal Contacts
  • Metal-Semiconductor Junctions
  • Polarity
  • Polarization
  • Semiconductors
  • Space Charge
  • Thin Films

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Space