Characterization of PZT Films Fatigue at Low Frequency,
Abstract
We report a method using SEM, EDX, SIMS, and polarization-voltage hysteresis data to investigate changes that occur in PZT thin films fatigued using low (below 100 kHz) frequency square waves. Fatigue in PZT capacitors can limit the lifetime of destructive readout ferroelectric memories. Identification of physical and electronic changes that occur during fatigue will lead to understanding fatigue mechanisms and the development of improved. Electrode-Ferroelectric interfaces.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 05, 1991
- Accession Number
- ADP006669
Entities
People
- B. A. Morgan
- M. S. Leung
- R. A. Lipeles
Organizations
- The Aerospace Corporation