Integrated of Ferroelectric PZT Capacitors with GaAs JFET Devices,

Abstract

This invited paper presents the development work on integration of ferroelectric PZT capacitors with GaAs JFET devices for the fabrication of high density nonvolatile ferroelectric random access memories at McDonnell Douglas Electronic Systems Company. The paper will start with the preparation and characterization of various properties of the PZT films deposited by a sol-gel technique. It will be followed by the two approaches investigated for the formation of the p+ gates of GaAs JFETs: zinc diffusion and zinc implantation. The process compatibility and sequence of memory fabrication incorporating these two approaches will be described. The difficulties associated with the zinc diffusion approach will be discussed. Finally, the current effort in the integration of the PZT capacitors and the implanted GaAs JFETs will be presented.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006671

Entities

People

  • Shuang Wu
  • W. A. Giedeman

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Capacitors
  • Colorado
  • Diffusion
  • Fabrication
  • High Density
  • Implantation
  • Sequences

Fields of Study

  • Materials science

Readers

  • Superconducting Magnet Technology
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems