A High-Capacitance PZT-on-Ta205 Memory Cell with a Chemically Stable Electrode Suitable for Sub-Micron Processing,

Abstract

A high-capacitance Pb(Zrx, Til-x)03 (PZT)-on-Ta2O5 memory cell suitable for sub-micron processing is proposed, and an experimental capacitor of PZT (Zr/Ti= 52/48)-on-Ta2O5 with Ta electrode was prepared. The X-ray diffraction and XMA analysis of the sample showed that PZT reacted with neither Ta nor Ta2O5. The capacitor with 500 nm PZT thickness shows current density of 10-8 A/cm2 at 4MV/cm,-the breakdown field of 8MV/cm, and the effective dielectric constant of 40.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006673

Entities

People

  • G. Kano
  • M. Azuma
  • S. Katsu
  • T. Nasu
  • T. Otsuki

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Colorado
  • Current Density
  • Dielectric Permittivity
  • Diffraction
  • Electrodes
  • Thickness
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.