Crack-Free PZT Thin Films Micropatterned on Silicon Substrate for Integrated Circuits,

Abstract

Process for getting crack-free lead zirconate titanate (PZT) thin films micropatterned on Si substrate is demonstrated. The PZT film was deposited at temperatures below 30 deg C by magnetron sputtering using a ceramic target, and then etched before annealing. After annealed above 500 deg C to get perovskite phase, the PZT films shows no crack, while PZT films, not patterned, has cracks. This result can be explained as dissipation of stress energy by reduction of the lateral size of the film. The effects of processing parameters of reactive sputtering and annealing on the morphology of the PZT thin films are presented. Photo-assist etching of the PZT thin films using KrF laser is described, too.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006675

Entities

People

  • Masanori Okuyama
  • Motoo Toyama
  • Naoto Inoue

Organizations

  • Osaka University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Annealing
  • Colorado
  • Films
  • Integrated Circuits
  • Krypton Fluoride Lasers
  • Lead Zirconate Titanates
  • Perovskites
  • Sputtering
  • Substrates
  • Thin Films
  • Titanates
  • Zirconates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition