Ferroelectric Pb(Zr,Ti) 03 Thin Films Prepared by Planar Multi-Target Sputtering,

Abstract

Lead zirconate titanate films are deposited using a planar multi-target sputtering system. This system consists of three metallic targets (Zr,Pb,Ti) and a rotating substrate holding pallet achieving a layer-by-layer growth of the material. Substrates used in this study were oxidised (100)Si wafers with thin sputtered Pt layer. At substrate temperatures of about 450 deg C in situ (i.e. without post-deposition annealing) deposition of single phase perovskite PZT was obtained. Deposition rate is 3.5 nm/min. At substrate temperatures of more than 500 deg C the layers are poor in lead. ZrTiO4 was identified by x-ray diffraction. The dielectric constant and losses of the PZT films varied from 400-500 and from 0.008-0.015 respectively. The films. exhibited a hysteresis loop, remanent polarization measured was 7 AC/cm2 and coercive field strength 7.5x10(6) V/m.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006676

Entities

People

  • D. Pitzer
  • H. Huber
  • R. Bruchhaus
  • W. Wersing

Tags

DTIC Thesaurus Topics

  • Colorado
  • Dielectric Permittivity
  • Diffraction
  • Films
  • Lead Zirconate Titanates
  • Materials
  • Perovskites
  • Sputtering
  • Substrates
  • Thin Films
  • Titanates
  • X Rays
  • X-Ray Diffraction
  • Zirconates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.