Ferroelectrics for Silicon VLSI,

Abstract

The application of ferroelectrics to EEPROM, non-volatile SRAMs, and sub-0.5 micron channel length MOS field effect transistors for silicon VLSI can significantly simplify device fabrication process, increase circuit density, and enhance device performance.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006678

Entities

People

  • Israel H. Kalish
  • Sheng T. Hsu

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Active Electronic Components
  • Colorado
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Field Effect Transistors
  • Semiconductor Devices
  • Solid State Electronics
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.