PbTi03 Thin Films Grown by Organometallic Chemical Vapour Deposition,

Abstract

We have used organometallic chemical vapour deposition (OMCVD) to deposit ferroelectric PbTiO3 films on both single crystalline (001)SrTiO3 and oxidized Si substrates provided with a platinum electrode, using the precursors titanium-iso-propoxide and tetra-ethyl lead. Epitaxial PbTiO3 layers were grown on (001)SrTiO3 at temperatures around 700 V. The epitaxial nature of the c-axis oriented PbTiO3 is confirmed by Rutherford backscattering spectrometry including channeling, x-ray diffraction (XRD) and high-resolution electron microscopy. A minimum channeling backscatter yield of - 3 % is obtained under optimal conditions. Polycrystalline PbTiO3 films have been deposited on the platinized Si substrates at temperatures between 400 deg C and 550 deg C. XRD shows that the films are of a single-phase perovskite-type structure. For a layer deposited at 400 deg C followed by an anneal at 700 deg C we measured an E, of - 100 kv/cm, an P, of - 55 AC/cm', and a switching time < 50 ns. This latter value was limited by the instrumental set-up.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006687

Entities

People

  • G. J. M. Dormans
  • M. De Keijser
  • P. K. Larsen

Tags

DTIC Thesaurus Topics

  • Backscattering
  • Colorado
  • Diffraction
  • Electron Microscopy
  • Films
  • High Resolution
  • Microscopy
  • Scattering
  • Substrates
  • Thin Films
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene