Electrical Switching in Lithium Niobate Thin Films,

Abstract

The ferroelectric switching properties of thin films of lithium niobate (LiNbO3) on silicon have been investigated. The polarization is shown to be partially reversible with an applied electric field at room temperature. The samples were films of LiNbO3 which were magnetron sputter deposited on silicon substrates. A double pulse method was used to investigate the ferroelectric switching properties of the films. Evidence for partial stable switching of the LiNbO3 film was observed at a field of roughly 500 kV/cm.

Document Details

Document Type
Technical Report
Publication Date
Apr 05, 1991
Accession Number
ADP006691

Entities

People

  • He Lin
  • Thomas A. Rabson
  • Timothy A. Rost

Organizations

  • Rice University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Colorado
  • Electric Fields
  • Films
  • Lithium
  • Lithium Niobates
  • Magnetrons
  • Niobates
  • Piezoceramics
  • Polarization
  • Reversible
  • Substrates
  • Switching
  • Thin Films

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.