High-power Operation of 1.48 Micron GalnAsp/GalnAsP Strained-layer Multiple Quantum Well Lasers,

Abstract

High-power semiconductor lasers emitting at 1.48um wavelength have been increasingly important as pumping light sources for Er3+-doped fiber amplifiers 1, 2. In this paper we report high power operation of 1.48 um GaInAsP/GaInAsP multiple quantum well (MQW) lasers which utilize strained-layer MQW structures as active layers.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP006979

Entities

People

  • H. Hayashi
  • H. Kamei
  • H. Kobayashi
  • M. Yoshimura
  • N. Tatoh

Organizations

  • Sumitomo Electric Industries

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Lasers
  • Light Amplifiers
  • Light Sources
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing