GaAlAs/GaAs Vertical Cavity Surface Emitting Active Filter,
Abstract
Semiconductor laser amplifiers are of Interest for direct light amplification as well as functional operation such as wavelength filtering and so on. An optical filter with narrow bandwidth and wavelength tuning is one of key devices for dense wavelength division multiplexing (WDM) trunk lines and networks. So far, laser diode active filters using Fabry-Perot cavity or DFB/DBR laser structures have been studied L-4. There are remaining problems in these devices, such as large polarization sensitivity due to those rectangular waveguide structure and difficult coupling to optical fibers. On the other hand, micro-cavity surface emitting (SE) lasers are now attracting much interest because of its ultra-low threshold and freedom in two-dimensional array 5. In this laser structure, a circular cavity is used, resulting in low polarization selectivity 6. If we use an SE laser structure for a resonance-type active filter/amplifier, we expect the following advantages; (1) low polarization sensitivity, (2) easy coupling to single mode fibers, (3) very low power consumption originated from ultra-low threshold, (4) large free spectral range due to ultra-short cavity structure, and so on.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007026
Entities
People
- F. Koyama
- K. Iga
- S. Kubota
Organizations
- Tokyo Institute of Technology