Soft-X-Ray Reduction Lithography Using a Reflection Mask,
Abstract
A soft-x-ray reduction lithography using a multilayer reflection mask has been developed. To obtain a high throughput and a large exposure area, a reduction system consisting of two-mirror optics and a reflection mask with a scanning mechanism is adopted as a first generation system. A full 4-inch wafer reflection mask with high contract and an uniform quality throughout has been fabricated using a new process. Mo/B4C multilayer is used to shorten the exposure wavelength and to refine interfaces of multilayer and to obtain a fine pattern. And fine patterns less than 0.2 um at a demagnification of 1/8 have been obtained with a reflection mask and Mo/B4C multilayer optics in the area of 0.8 mm x0.15 mm.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007228
Entities
People
- H. Kinoshita
- K. Kurihara
- T. Haga
- T. Mizota
- Y. Torii
Organizations
- NTT, Inc.