Effects of Absorption on Resist Performance in Soft-X-Ray Projection Lithography,
Abstract
We measure the lithographic parameters of the positive photoresist, PMMA (poly methyl methacrylate) at exposure wavelengths of 37.5 and 14 nm and use them in a modified version of SAMPLE (simulation and modeling of profiles in lithography and etching) to simulate resist profiles at these wavelengths. We conclude that the most important parameter in determining image quality is the exposure independent soft-x-ray absorption coefficient.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007254
Entities
People
- A. A. Macdowell
- J. E. Bjorkholm
- L. H. Szeto
- R. R. Freeman
- W. M. Mansfield