Low-Threshold Optical Bistability in Bulk GaAs Etalons,

Abstract

A nonlinear Fabry-Perot device with a 2 um bulk GaAs spacer has been optimized numerically. A corresponding sample, grown by molecular beam epitaxy, exhibits thermally stable switching with contrasts of 8:1 and thresholds as low as 1 mW. Besides the switching behavior, we present measurements of the dependence of switching threshold and contrast on spotsize and wavelength detuning.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007415

Entities

People

  • B. Acklin
  • C. Bagnoud

Organizations

  • University of Neuchâtel

Tags

DTIC Thesaurus Topics

  • Contrast
  • Detuning
  • Epitaxial Growth
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Switching

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology