Photonic Switching Device by Integration of Heterojunction Phototransistor and Laser Diode,
Abstract
High gain and very sensitive photonic switching device is developed by integrating directly and vertically a hetero-junction phototransistor and a laser diode. The device switches on with a very low input power of -10nW and emits output power of -4mW under continuous wave condition. The minimum switching energy is estimated to be as low as 8OfJ.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007423
Entities
People
- Akio Sasaki
- Kimitaka Shibata
- Susumu Noda
- Toru Takayama
Organizations
- Kyoto University