Low-Power High-Gain Optoelectronic Switch Based on Quantum Stark Effect and Its Use in Logic Operations,

Abstract

A low optical power switching device is demonstrated by using quantum Stark effect in a specially designed base collector region of a heterojunction bipolar transistor.

Document Details

Document Type
Technical Report
Publication Date
May 22, 1992
Accession Number
ADP007424

Entities

People

  • J. Singh
  • P. Bhattacharya
  • Somdatta Goswami
  • Wen Li

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Active Electronic Components
  • Bipolar Junction Transistors
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Field Effect Transistors
  • Gain
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • High Gain
  • Semiconductor Devices
  • Stark Effect
  • Switching
  • Transistors

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing