Nonlinear Refraction and Absorption of an InGaAs Single Quantum Well in an InGaAsP Waveguide,
Abstract
Semiconductor quantum-well structures can provide enhanced nonlinear effects compared to those observed in bulk material. The largest irradiance-induced refractive changes occur at wavelengths nearly resonant with the band edge or exciton absorption. If such a nonlinearity is to be effectively exploited in a waveguide configuration, the absorption due to the active quantum-well layers must be diluted to ensure sufficient transmission. Although this produces, all else being equal, a proportional drop in the effective nonlinearity (n sub 2), it does permit operation at, or near to, the optimum wavelength where the figure-of-merit n sub 2/Alpha is maximized.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007581
Entities
People
- A. C. Walker
- C. I. Johnston
- D. J. Goodwill
- D. T. Neilson
- J. E. Ehrlich
Organizations
- Heriot-Watt University