Nonlinear Absorption Processes at Half the Band Gap in GaAs Based Semiconductors,
Abstract
The utility of the ultrafast nonlinearity in semiconductor waveguides operated below the band gap is limited by two photon absorption Beta (Alpha = Beta I where I is the intensity) which does not allow a nonlinear 2 Pi phase shift over one absorption length. However, the two photon coefficient should be zero below half the band gap, potentially allowing for all-optical device operation there. Here we report the first measurements of two photon absorption in GaAs waveguides in the vicinity of half the band gap.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007585
Entities
People
- A. Villeneuve
- C. N. Ironside
- G. I. Stegeman
- G. Scelsi
- J. S. Aitchison
Organizations
- University of Central Florida