Nonlinearity Enhancement in a Four Layer GaAs/GaAlAs Waveguide,
Abstract
The photorefractive effect in semiconductor materials is attractive for processing low intensity near-infrared optical signals which are important for optical communication and optical computing. Photoinduced large nonlinearity in GaAs materials has been extensively studied in bulk material. A few is with optical waveguide of GaAs materials though the signal amplification in GaAs waveguide via two wavemixing has been proposed.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007594
Entities
People
- Chagangjun Liao
- Huaichen Jin
- Shaomei Chen
- Zhaohong Huang
Organizations
- South China Normal University