Picosecond High-Voltage Photoconductive Switching,
Abstract
We report on the generation of 850 V electrical pulses with 1.4 ps rise time and 4 ps Full-Width-at-Half-Maximum using pulse biased Low-Temperature-grown GaAs photoconductive switch triggered by an amplified femtosecond dye laser. Dependence of the temporal pulse shape on both the electric field and the optical energy is observed and discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 22, 1992
- Accession Number
- ADP007639
Entities
People
- G. Mourou
- John Nees
- S. Williamson
- T. Motet
Organizations
- University of Michigan